RUMORED BUZZ ON GERMANIUM

Rumored Buzz on Germanium

s is the fact with the substrate substance. The lattice mismatch leads to a large buildup of pressure Electricity in Ge layers epitaxially grown on Si. This strain energy is largely relieved by two mechanisms: (i) technology of lattice dislocations in the interface (misfit dislocations) and (ii) elastic deformation of both the substrate as well as

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